Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi. Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectronics Reliability, 88:941-945, 2018. [doi]
@article{AbbateBMSSTV18,
title = {Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation},
author = {Carmine Abbate and Giovanni Busatto and S. Mattiazzo and Annunziata Sanseverino and L. Silvestrin and D. Tedesco and Francesco Velardi},
year = {2018},
doi = {10.1016/j.microrel.2018.07.100},
url = {https://doi.org/10.1016/j.microrel.2018.07.100},
researchr = {https://researchr.org/publication/AbbateBMSSTV18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {941-945},
}