Researchr is a web site for finding, collecting, sharing, and reviewing scientific publications, for researchers by researchers.
Sign up for an account to create a profile with publication list, tag and review your related work, and share bibliographies with your co-authors.
Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi. Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectronics Reliability, 88:941-945, 2018. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Experimental study of power MOSFET s gate damage in radiation environmentG. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò. mr, 46(9-11):1854-1857, 2006. [doi]
The following publications are possibly variants of this publication: