G. Busatto - researchr alias

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Viewing Publication 1 - 17 from 17

2013

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuitCarmine Abbate, G. Busatto, Francesco Iannuzzo, C. Ronsisvalle, A. Sanseverino, F. Velardi. mr, 53(9-11):1707-1712, 2013. [doi]

2012

Unclamped repetitive stress on 1200 V normally-off SiC JFETsCarmine Abbate, G. Busatto, Francesco Iannuzzo. mr, 52(9-10):2420-2425, 2012. [doi]

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposureG. Busatto, V. De Luca, Francesco Iannuzzo, A. Sanseverino, F. Velardi. mr, 52(9-10):2363-2367, 2012. [doi]

2010

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFETG. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi. mr, 50(9-11):1842-1847, 2010. [doi]

2009

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ionsG. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi. mr, 49(9-11):1033-1037, 2009. [doi]

2008

IGBT modules robustness during turn-off commutationG. Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo. mr, 48(8-9):1435-1439, 2008. [doi]

Experimental evidence of latent gate oxide damages in medium voltage power MOSFET as a result of heavy ions exposureG. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi. mr, 48(8-9):1306-1309, 2008. [doi]

2007

The robustness of series-connected high power IGBT modulesCarmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo, B. Cascone, R. Manzo. mr, 47(9-11):1746-1750, 2007. [doi]

2006

The high frequency behaviour of high voltage and current IGBT modulesC. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo. mr, 46(9-11):1848-1853, 2006. [doi]

Experimental study of power MOSFET s gate damage in radiation environmentG. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò. mr, 46(9-11):1854-1857, 2006. [doi]

Investigation of MOSFET failure in soft-switching conditionsF. Iannuzzo, G. Busatto, C. Abbate. mr, 46(9-11):1790-1794, 2006. [doi]

2005

Experimental and Numerical investigation about SEB/SEGR of Power MOSFETG. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò. mr, 45(9-11):1711-1716, 2005. [doi]

2003

2002

Non-destructive high temperature characterisation of high-voltage IGBTsG. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi. mr, 42(9-11):1635-1640, 2002. [doi]

The Reliability of New Generation Power MOSFETs in Radiation EnvironmentF. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy. mr, 42(9-11):1629-1634, 2002. [doi]

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