Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions

G. Busatto, G. CurrĂ², Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi. Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectronics Reliability, 49(9-11):1033-1037, 2009. [doi]

Abstract

Abstract is missing.