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Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi. Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectronics Reliability, 50(9-11):1842-1847, 2010. [doi]

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