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Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi. Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectronics Reliability, 76:314-320, 2017. [doi]

Authors

Carmine Abbate

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Giovanni Busatto

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Annunziata Sanseverino

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D. Tedesco

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Francesco Velardi

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