Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi. Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectronics Reliability, 76:314-320, 2017. [doi]
@article{AbbateBSTV17,
title = {Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit},
author = {Carmine Abbate and Giovanni Busatto and Annunziata Sanseverino and D. Tedesco and Francesco Velardi},
year = {2017},
doi = {10.1016/j.microrel.2017.07.020},
url = {https://doi.org/10.1016/j.microrel.2017.07.020},
researchr = {https://researchr.org/publication/AbbateBSTV17},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {76},
pages = {314-320},
}