The following publications are possibly variants of this publication:
- Failure analysis of 650 V enhancement mode GaN HEMT after short circuit testsCarmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi. mr, 88:677-683, 2018. [doi]
- Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMTCarmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi. mr, 55(9-10):1496-1500, 2015. [doi]