Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi. Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectronics Reliability, 88:677-683, 2018. [doi]

Abstract

Abstract is missing.