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Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi. Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectronics Reliability, 88:677-683, 2018. [doi]

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Carmine Abbate

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Giovanni Busatto

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Annunziata Sanseverino

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D. Tedesco

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Francesco Velardi

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