Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi. Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectronics Reliability, 88:677-683, 2018. [doi]
@article{AbbateBSTV18a,
title = {Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests},
author = {Carmine Abbate and Giovanni Busatto and Annunziata Sanseverino and D. Tedesco and Francesco Velardi},
year = {2018},
doi = {10.1016/j.microrel.2018.07.071},
url = {https://doi.org/10.1016/j.microrel.2018.07.071},
researchr = {https://researchr.org/publication/AbbateBSTV18a},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {677-683},
}