Mohamed Amir Abdi, Fayçal Djeffal, Mohammed Meguellati, Djemai Arar. Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs. In 16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Yasmine Hammamet, Tunesia, 13-19 December, 2009. pages 892-895, IEEE, 2009. [doi]
Abstract is missing.