Fayçal Djeffal - researchr alias

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Viewing Publication 1 - 33 from 33

2023

Structural and Electrical Properties of Ag/SnO2 for Photovoltaic ApplicationsFayçal Djeffal, Hichem Ferhati. icsc2 2023: 667-670 [doi]

Optical and Electrical Properties of Annealed AZO/Ag/AZO Multilayer Deposited Using RF Sputtering TechniqueHichem Ferhati, K. Kacha, Adel Bendjerad, Fayçal Djeffal, Abdelhamid Benhaya. iceee 2023: 1-5 [doi]

Performance assessment of a new optimized Junctionless SiSn MOSFETHichem Ferhati, K. Kacha, R. Labchek, K. Dibi, Fayçal Djeffal. iceee 2023: 1-5 [doi]

Novel SnS Absorber Film Based on Grooves and Au-Nanoparticles for Photovoltaic ApplicationsHichem Ferhati, Fayçal Djeffal. icsc2 2023: 943-947 [doi]

Numerical Investigation of a New Double-Absorber Lead-free Perovskite Solar Cell via SCAPS-1DA. Maoucha, Fayçal Djeffal, Hichem Ferhati. iceee 2023: 1-5 [doi]

A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level InvestigationBadreddine Zerroumda, Hichem Ferhati, Fayçal Djeffal, Adel Bendjerad. iceee 2023: 1-5 [doi]

2022

Magnetic properties of RF sputtered NbO-Ni and NiO-Nb multilayer thin films: Application of Preisach modelA. Bendjerad, A. Benhaya, Hichem Ferhati, F. Smaili, S. Rahmani, Fayçal Djeffal, A. Lahmar. IEEEssd 2022: 638-642 [doi]

New Ge-gate IR Phototransistor based on Doping Engineering Aspect: Photodetection Properties and Circuit Level InvestigationFayçal Djeffal, Hichem Ferhati. iceee 2022: 1-4 [doi]

Enhanced Photoresponse of Ultraviolet Photodetector via RF Sputtered ZnO/a-SiC HeterostructureFayçal Djeffal, Hichem Ferhati, A. Benhaya, A. Bendjerad. IEEEssd 2022: 1039-1043 [doi]

Numerical Investigation of a New GeSn MIR Phototransistor based on IGZO TFT PlatformFayçal Djeffal, Hichem Ferhati. iceee 2022: 1-5 [doi]

Effects of annealing on the structural and optical properties of sputtered SiC/Ag/SiC multilayerHichem Ferhati, A. Bendjerad, Fayçal Djeffal, A. Benhaya, A. Saidi. iceee 2022: 1-4 [doi]

Investigation of a new power junctionless MOSFET using 2-D numerical simulationBadreddine Zerroumda, Fayçal Djeffal, Said Benaggoune, Hichem Ferhati. IEEEssd 2022: 566-570 [doi]

2020

An ANFIS-based Computation to Study the Degradation-related Ageing effects in Nanoscale GAA-TFETsToufik Bentrcia, Fayçal Djeffal, Hichem Ferhati. icist2 2020: [doi]

Novel Infrared phototransistor based on Junctionless TFET design: Numerical Analysis and Performance AssessmentHichem Ferhati, Fayçal Djeffal, Toufik Bentrcia. icist2 2020: [doi]

Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier EffectsH. Ferhati, Fayçal Djeffal, Toufik Bentrcia. icm2 2020: 1-4 [doi]

2018

Device and Circuit Level Performance Analysis of a New Nanoscale DGJL MOSFET Design Using an Accurate Numerical ComputationElasaad Chebaki, Fayçal Djeffal, Toufik Bentrcia, Hichem Ferhati. icsent 2018: [doi]

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic ApplicationsBadreddine Zerroumda, Fayçal Djeffal, Toufik Bentrcia, Hichem Ferhati. icsent 2018: [doi]

2017

2015

2013

An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effectsT. Bentrcia, Fayçal Djeffal, M. Chahdi. mr, 53(4):520-527, 2013. [doi]

2012

New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regimeN. Lakhdar, Fayçal Djeffal. mr, 52(6):958-963, 2012. [doi]

2011

A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETsFayçal Djeffal, T. Bendib, Mohamed Amir Abdi. mj, 42(12):1391-1395, 2011. [doi]

Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFETFayçal Djeffal, T. Bendib. mj, 42(5):661-666, 2011. [doi]

Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effectsFayçal Djeffal, T. Bentrcia, Mohamed Amir Abdi, T. Bendib. mr, 51(3):550-555, 2011. [doi]

2009

2008

An equivalent circuit approach to organic solar cell modellingAli Cheknane, Hikmat S. Hilal, Fayçal Djeffal, Boumediène Benyoucef, Jean-Pierre Charles. mj, 39(10):1173-1180, 2008. [doi]

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Publications by 'Fayçal Djeffal'

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2023

2022

2020

2018

2017

2015

2013

2012

2011

2009

2008

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