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Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects

H. Ferhati, Fayçal Djeffal, Toufik Bentrcia. Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects. In 32nd International Conference on Microelectronics, ICM 2020, Aqaba, Jordan, December 14-17, 2020. pages 1-4, IEEE, 2020. [doi]

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