An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects

T. Bentrcia, Fayçal Djeffal, M. Chahdi. An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects. Microelectronics Reliability, 53(4):520-527, 2013. [doi]

Abstract

Abstract is missing.