The following publications are possibly variants of this publication:
- A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETsFayçal Djeffal, T. Bendib, Mohamed Amir Abdi. mj, 42(12):1391-1395, 2011. [doi]
- Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETsMohamed Amir Abdi, Fayçal Djeffal, Mohammed Meguellati, Djemai Arar. icecsys 2009: 892-895 [doi]
- Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface chargesFayçal Djeffal, Z. Ghoggali, Zohir Dibi, N. Lakhdar. mr, 49(4):377-381, 2009. [doi]