Scalable 0.35 V to 1.2 V SRAM Bitcell Design From 65 nm CMOS to 28 nm FDSOI - researchr publication

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Fady Abouzeid, Audrey Bienfait, Kaya Can Akyel, Anis Feki, Sylvain Clerc, Lorenzo Ciampolini, Fabien Giner, Robin Wilson, Philippe Roche. Scalable 0.35 V to 1.2 V SRAM Bitcell Design From 65 nm CMOS to 28 nm FDSOI. J. Solid-State Circuits, 49(7):1499-1505, 2014. [doi]

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