Novel hafnium oxide memristor device: Switching behaviour and size effect

Heba Abunahla, Baker Mohammad, Maguy Abi Jaoude, Mahmoud Al-Qutayri. Novel hafnium oxide memristor device: Switching behaviour and size effect. In IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017. pages 1-4, IEEE, 2017. [doi]

Abstract

Abstract is missing.