An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs

Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, S. Jit. An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011, 4-6 July 2011, Chennai, India. pages 327-328, IEEE Computer Society, 2011. [doi]

Authors

Harshit Agnihotri

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Abhishek Ranjan

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Pramod Kumar Tiwari

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S. Jit

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