Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, S. Jit. An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011, 4-6 July 2011, Chennai, India. pages 327-328, IEEE Computer Society, 2011. [doi]
@inproceedings{AgnihotriRTJ11,
title = {An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs},
author = {Harshit Agnihotri and Abhishek Ranjan and Pramod Kumar Tiwari and S. Jit},
year = {2011},
doi = {10.1109/ISVLSI.2011.86},
url = {http://dx.doi.org/10.1109/ISVLSI.2011.86},
researchr = {https://researchr.org/publication/AgnihotriRTJ11},
cites = {0},
citedby = {0},
pages = {327-328},
booktitle = {IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011, 4-6 July 2011, Chennai, India},
publisher = {IEEE Computer Society},
}