L. Aguilera, M. Porti, M. Nafría, X. Aymerich. Pre- and post-BD electrical conduction of stressed HfO::2::/SiO::2:: MOS gate stacks observed at the nanoscale. Microelectronics Reliability, 45(9-11):1390-1393, 2005. [doi]
@article{AguileraPNA05,
title = {Pre- and post-BD electrical conduction of stressed HfO::2::/SiO::2:: MOS gate stacks observed at the nanoscale},
author = {L. Aguilera and M. Porti and M. Nafría and X. Aymerich},
year = {2005},
doi = {10.1016/j.microrel.2005.07.105},
url = {http://dx.doi.org/10.1016/j.microrel.2005.07.105},
researchr = {https://researchr.org/publication/AguileraPNA05},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {9-11},
pages = {1390-1393},
}