The following publications are possibly variants of this publication:
- Pre-breakdown noise in electrically stressed thin SiO::2:: layers of MOS devices observed with C-AFMM. Porti, S. Meli, M. Nafría, X. Aymerich. mr, 43(8):1203-1209, 2003. [doi]
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- Trapped charge and stress induced leakage current (SILC) in tunnel SiO::2:: layers of de-processed MOS non-volatile memory devices observed at the nanoscaleM. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani. mr, 49(9-11):1188-1191, 2009. [doi]
- Influence of the SiO::2:: layer thickness on the degradation of HfO::2::/SiO::2:: stacks subjected to static and dynamic stress conditionsE. Amat, R. Rodríguez, M. Nafría, X. Aymerich, James H. Stathis. mr, 47(4-5):544-547, 2007. [doi]
- Breakdown spots of ultra-thin (EOT<1.5nm) HfO::2::/SiO::2:: stacks observed with enhanced - CAFMX. Blasco, M. Nafría, X. Aymerich, J. Pétry, Wilfried Vandervorst. mr, 45(5-6):811-814, 2005. [doi]
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