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Trapped charge and stress induced leakage current (SILC) in tunnel SiO::2:: layers of de-processed MOS non-volatile memory devices observed at the nanoscale

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani. Trapped charge and stress induced leakage current (SILC) in tunnel SiO::2:: layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectronics Reliability, 49(9-11):1188-1191, 2009. [doi]

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