Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg. Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 3-1, IEEE, 2018. [doi]
@inproceedings{AguirrePPFWE18,
title = {Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks},
author = {Fernando L. Aguirre and Sebastián Matías Pazos and Felix Palumbo and Sivan Fadida and Roy Winter and Moshe Eizenberg},
year = {2018},
doi = {10.1109/IRPS.2018.8353663},
url = {https://doi.org/10.1109/IRPS.2018.8353663},
researchr = {https://researchr.org/publication/AguirrePPFWE18},
cites = {0},
citedby = {0},
pages = {3},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}