Md Rishad Ahmed, Rebecca Todd, Andrew J. Forsyth. Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions. IEEE Transactions on Industrial Electronics, 64(11):9001-9011, 2017. [doi]
@article{AhmedTF17,
title = {Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions},
author = {Md Rishad Ahmed and Rebecca Todd and Andrew J. Forsyth},
year = {2017},
doi = {10.1109/TIE.2017.2721882},
url = {https://doi.org/10.1109/TIE.2017.2721882},
researchr = {https://researchr.org/publication/AhmedTF17},
cites = {0},
citedby = {0},
journal = {IEEE Transactions on Industrial Electronics},
volume = {64},
number = {11},
pages = {9001-9011},
}