Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETs

Sheikh Z. Ahmed, Yaohua Tan, Avik W. Ghosh. Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 95-96, IEEE, 2019. [doi]

@inproceedings{AhmedTG19,
  title = {Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETs},
  author = {Sheikh Z. Ahmed and Yaohua Tan and Avik W. Ghosh},
  year = {2019},
  doi = {10.1109/DRC46940.2019.9046439},
  url = {https://doi.org/10.1109/DRC46940.2019.9046439},
  researchr = {https://researchr.org/publication/AhmedTG19},
  cites = {0},
  citedby = {0},
  pages = {95-96},
  booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-2112-3},
}