7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

JungChak Ahn, Kyungho Lee, Yitae Kim, Heegeun Jeong, Bumsuk Kim, Hongki Kim, JongEun Park, Taesub Jung, Wonje Park, Taeheon Lee, Eunkyung Park, Sangjun Choi, Gyehun Choi, Haeyong Park, Yujung Choi, Seungwook Lee, Yunkyung Kim, Y. J. Jung, Donghyuk Park, Seungjoo Nah, Youngsun Oh, Mihye Kim, Yooseung Lee, Youngwoo Chung, Ihara Hisanori, Joon-Hyuk Im, Daniel-K J Lee, Byunghyun Yim, GiDoo Lee, Heesang Kown, Sungho Choi, Jeonsook Lee, Dongyoung Jang, Youngchan Kim, Tae-Chan Kim, Hiroshige Goto, Chi-young Choi, Duckhyung Lee, Gab-soo Han. 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 124-125, IEEE, 2014. [doi]

Abstract

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