Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories

Sangmin Ahn, Hyungcheol Shin. Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories. IEICE Electronic Express, 18(19):20210299, 2021. [doi]

Abstract

Abstract is missing.