Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications

K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity, Denis Flandre, Valeria Kilchytska. Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 236-239, IEEE, 2017. [doi]

Abstract

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