Massimo Alioto. Comparative Evaluation of Layout Density in 3T, 4T, and MT FinFET Standard Cells. IEEE Trans. VLSI Syst., 19(5):751-762, 2011. [doi]
@article{Alioto11,
title = {Comparative Evaluation of Layout Density in 3T, 4T, and MT FinFET Standard Cells},
author = {Massimo Alioto},
year = {2011},
doi = {10.1109/TVLSI.2010.2040094},
url = {http://dx.doi.org/10.1109/TVLSI.2010.2040094},
tags = {layout},
researchr = {https://researchr.org/publication/Alioto11},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {19},
number = {5},
pages = {751-762},
}