Lifetime reliability characterization of N/MEMS used in power gating of digital integrated circuits

Haider Alrudainy, Rishad A. Shafik, Andrey Mokhov, Alex Yakovlev. Lifetime reliability characterization of N/MEMS used in power gating of digital integrated circuits. In IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2017, Cambridge, United Kingdom, October 23-25, 2017. pages 1-6, IEEE, 2017. [doi]

Abstract

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