Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells - researchr publication authors

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Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, A. Rubio, Ramon Canal. Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells. In IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013. pages 81-84, IEEE, 2013. [doi]

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