Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, A. Rubio, Ramon Canal. Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells. In IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013. pages 81-84, IEEE, 2013. [doi]
@inproceedings{AmatAARC13,
title = {Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells},
author = {Esteve Amat and Carmen G. Almudéver and Nivard Aymerich and A. Rubio and Ramon Canal},
year = {2013},
doi = {10.1109/MWSCAS.2013.6674590},
url = {https://doi.org/10.1109/MWSCAS.2013.6674590},
researchr = {https://researchr.org/publication/AmatAARC13},
cites = {0},
citedby = {0},
pages = {81-84},
booktitle = {IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013},
publisher = {IEEE},
}