Esteve Amat, Antonio Calomarde, Ramon Canal, A. Rubio. Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. In 27th International Symposium on Power and Timing Modeling, Optimization and Simulation, PATMOS 2017, Thessaloniki, Greece, September 25-27, 2017. pages 1-6, IEEE, 2017. [doi]
@inproceedings{AmatCCR17,
title = {Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level},
author = {Esteve Amat and Antonio Calomarde and Ramon Canal and A. Rubio},
year = {2017},
doi = {10.1109/PATMOS.2017.8106951},
url = {https://doi.org/10.1109/PATMOS.2017.8106951},
researchr = {https://researchr.org/publication/AmatCCR17},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {27th International Symposium on Power and Timing Modeling, Optimization and Simulation, PATMOS 2017, Thessaloniki, Greece, September 25-27, 2017},
publisher = {IEEE},
isbn = {978-1-5090-6462-5},
}