Behnam Amelifard, Massoud Pedram, Farzan Fallah. Low-leakage SRAM Design with Dual V_t Transistors. In 7th International Symposium on Quality of Electronic Design (ISQED 2006), 27-29 March 2006, San Jose, CA, USA. pages 729-734, IEEE Computer Society, 2006. [doi]
@inproceedings{AmelifardPF06,
title = {Low-leakage SRAM Design with Dual V_t Transistors},
author = {Behnam Amelifard and Massoud Pedram and Farzan Fallah},
year = {2006},
doi = {10.1109/ISQED.2006.84},
url = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2006.84},
tags = {design},
researchr = {https://researchr.org/publication/AmelifardPF06},
cites = {0},
citedby = {0},
pages = {729-734},
booktitle = {7th International Symposium on Quality of Electronic Design (ISQED 2006), 27-29 March 2006, San Jose, CA, USA},
publisher = {IEEE Computer Society},
isbn = {0-7695-2523-7},
}