A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies - researchr publication

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Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram. A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Integration, 50:91-106, 2015. [doi]

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