Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll. Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. Microelectronics Reliability, 47(9-11):1416-1418, 2007. [doi]
@article{AresuKPG07,
title = {Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors},
author = {Stefano Aresu and Werner Kanert and Reinhard Pufall and Michael Goroll},
year = {2007},
doi = {10.1016/j.microrel.2007.07.021},
url = {http://dx.doi.org/10.1016/j.microrel.2007.07.021},
researchr = {https://researchr.org/publication/AresuKPG07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {9-11},
pages = {1416-1418},
}