High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack - researchr publication authors

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F. Arith, J. Urrcsti, K. Vasilevskiy, S. Oisenl, N. Wright, A. O'Neill. High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 30-33, IEEE, 2018. [doi]

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