F. Arith, J. Urrcsti, K. Vasilevskiy, S. Oisenl, N. Wright, A. O'Neill. High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 30-33, IEEE, 2018. [doi]
@inproceedings{ArithUVOWO18,
title = {High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack},
author = {F. Arith and J. Urrcsti and K. Vasilevskiy and S. Oisenl and N. Wright and A. O'Neill},
year = {2018},
doi = {10.1109/ESSDERC.2018.8486896},
url = {https://doi.org/10.1109/ESSDERC.2018.8486896},
researchr = {https://researchr.org/publication/ArithUVOWO18},
cites = {0},
citedby = {0},
pages = {30-33},
booktitle = {48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5401-9},
}