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Alireza Asoodeh, Hossein Miri Lavasani, Mengye Cai, Shahriar Mirabbasi. dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS". J. Solid-State Circuits, 56(9):2896, 2021. [doi]
Abstract is missing.