Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control - researchr publication authors

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Vivek Asthana, Malathi Kar, Jean Jimenez, Jean-Philippe Noel, Sébastien Haendler, Philippe Galy. Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control. In ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference, Bucharest, Romania, September 16-20, 2013. pages 415-418, IEEE, 2013. [doi]

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