Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor

Getenet Tesega Ayele, Stephane Monfray, Frédéric Boeuf, Jean-Pierre Cloarec, Serge Ecoffey, Dominique Drouin, Etienne Puyoo, Abdelkader Souifi. Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 264-267, IEEE, 2017. [doi]

Abstract

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