Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization - researchr publication authors

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M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, S. Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola. Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 266-269, IEEE, 2015. [doi]

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