LCSRAM: A Leakage Controlled Six-transistor Static Random Access Memory Cell with Intrinsically High Read Stability - researchr publication authors

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Sayeed A. Badrudduza, Giby Samson, Lawrence T. Clark. LCSRAM: A Leakage Controlled Six-transistor Static Random Access Memory Cell with Intrinsically High Read Stability. In 20th International Conference on VLSI Design (VLSI Design 2007), Sixth International Conference on Embedded Systems (ICES 2007), 6-10 January 2007, Bangalore, India. pages 621-626, IEEE Computer Society, 2007. [doi]

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