Sayeed A. Badrudduza, Giby Samson, Lawrence T. Clark. LCSRAM: A Leakage Controlled Six-transistor Static Random Access Memory Cell with Intrinsically High Read Stability. In 20th International Conference on VLSI Design (VLSI Design 2007), Sixth International Conference on Embedded Systems (ICES 2007), 6-10 January 2007, Bangalore, India. pages 621-626, IEEE Computer Society, 2007. [doi]
@inproceedings{BadrudduzaSC07,
title = {LCSRAM: A Leakage Controlled Six-transistor Static Random Access Memory Cell with Intrinsically High Read Stability},
author = {Sayeed A. Badrudduza and Giby Samson and Lawrence T. Clark},
year = {2007},
doi = {10.1109/VLSID.2007.96},
url = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.96},
tags = {access control},
researchr = {https://researchr.org/publication/BadrudduzaSC07},
cites = {0},
citedby = {0},
pages = {621-626},
booktitle = {20th International Conference on VLSI Design (VLSI Design 2007), Sixth International Conference on Embedded Systems (ICES 2007), 6-10 January 2007, Bangalore, India},
publisher = {IEEE Computer Society},
isbn = {0-7695-2502-4},
}