Highly stable, low power FinFET SRAM cells with exploiting dynamic back-gate biasing

Leila Bagheriye, Siroos Toofan, Roghayeh Saeidi, Farshad Moradi. Highly stable, low power FinFET SRAM cells with exploiting dynamic back-gate biasing. Integration, 65:128-137, 2019. [doi]

Abstract

Abstract is missing.