A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu, Ran Liu 0001, Lirong Zheng 0001. A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance. In 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

Abstract is missing.