Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells - researchr publication authors

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M. Barlas, B. Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, M. Alayan, B. Sklenard, E. Jalaguier, P. Rodriguez, F. Mazen, E. Vilain, M. Guillermet, S. Jeannot, Elisa Vianello, Luca Perniola. Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 168-171, IEEE, 2016. [doi]

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