Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery - researchr publication authors

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J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi. Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 1-6, IEEE, 2022. [doi]

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