Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit - researchr publication authors

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Simon Van Beek, Philippe Roussel, Barry O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar. Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 146-149, IEEE, 2018. [doi]

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